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POWER DEVICE RELIABILITY SUMMARY
| DEVICE POWER MOS | PACKAGE TO-262 | |||
| PROCESS LOW VOLTAGE NCH PWR MOS LOGIC LEVEL | ||||
| APPLIED STRESS | FAILURES | SAMPLE | CUM. TIME | |
| THERMAL FATIGUE Pd=4.75 w, Delta=125 deg c. |
0 | 120 | 1440000 | CYS |
| OPERATING LIFE 15 volts, T=200 deg c. |
0 | 60 | 30000 | HRS |
| HIGH TEMP REV BIAS 80% Rated voltage, 150 deg c. |
0 | 60 | 30000 | HRS |
| HIGH TEMP GATE BIAS 100% Rated voltage, 150 deg c. |
0 | 50 | 25000 | HRS |
| STORAGE LIFE T=200 deg c. |
0 | 60 | 30000 | HRS |
| THERMAL SHOCK -65 to 250 deg c. Liq./Liq. |
0 | 60 | 36000 | CYS |
| AUTOCLAVE T=121 deg c, 15 psig |
0 | 60 | 5760 | HRS |
| HUMIDITY BIAS 80% Rated(40v max) 85c/85rc |
0 | 154 | 154000 | HRS |
| FAILURE RATE @ 55 Deg. C, 60%
Confidence, 1.0 EV Activation: 10.94023 FIT |
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