POWER DEVICE RELIABILITY SUMMARY

DEVICE POWER MOS PACKAGE TO-251
PROCESS LOW VOLTAGE NCH PWR MOS LOGIC LEVEL
APPLIED STRESS FAILURES SAMPLE CUM. TIME  
THERMAL FATIGUE
Pd=2 w, Delta=100 deg c.
0 200 2400000 CYS
OPERATING LIFE
15 volts, T=200 deg c.
0 100 50000 HRS
HIGH TEMP REV BIAS
80% Rated voltage, 150 deg c.
0 80 40000 HRS
HIGH TEMP GATE BIAS
100% Rated voltage, 150 deg c.
0 100 50000 HRS
STORAGE LIFE
T=200 deg c.
0 100 50000 HRS
THERMAL SHOCK
-65 to 250 deg c. Liq./Liq.
0 100 60000 CYS
AUTOCLAVE
T=121 deg c, 15 psig
0 100 9600 HRS
FAILURE RATE @ 55 Deg. C, 60% Confidence, 1.0 EV Activation:
8.205258 FIT
 
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