POWER DEVICE RELIABILITY SUMMARY

DEVICE POWER MOS PACKAGE TO-39
PROCESS LOW VOLTAGE NCH PWR MOS STD GATE
APPLIED STRESS FAILURES SAMPLE CUM. TIME  
THERMAL FATIGUE
Pd=1 w, Delta=70 deg c.
0 200 2400000 CYS
OPERATING LIFE
15 volts, T=200 deg c.
0 100 50000 HRS
HIGH TEMP REV BIAS
80% Rated voltage, 150 deg c.
0 94 47000 HRS
HIGH TEMP GATE BIAS
100% Rated voltage, 150 deg c.
0 100 50000 HRS
STORAGE LIFE
T=200 deg c.
0 100 50000 HRS
TEMPERATURE CYCLE
-65 to 150 deg c. Air/Air
0 80 40000 CYS
FAILURE RATE @ 55 Deg. C, 60% Confidence, 1.0 EV Activation:
6.983069 FIT
 
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