Overview

Ultra FRFET™ family - optimizes designs by providing best-in-class reverse recovery time (trr) of 35ns~65ns and the industry’s smallest reverse recovery current (1.8 ~ 3.1A). Present LCD TV designs use MOSFETs with two fast recovery diodes (FRDs) and two blocking diodes in a half-bridge circuit to initiate the non-zero voltage switching. The FRDs are used to reduce the reverse recovery current. The blocking diodes prevent the built-in diode of the MOSFET from turning on and eliminate the large reverse recovery current of the diodes. Fairchild’s breakthrough solution eliminates the need for two blocking diodes and two FRDs in the half-bridge circuit, saving board space and cost .

Requirements

Application specific MOSFET for Non-ZVS systems
(High Voltage Backlighting Inverter for LCD TV and Dimmable ballast)
Fastest reverse recovery characteristics of Drain-Source Diode (BVdss : 500V and 600V)

Advantages

• Lower switching loss with smaller trr and Qg
• Remove external blocking diodes and FRDs in bridge typed circuit
• High reliability in high temperature and frequency ( high diode dv/dt immunity > 20V/ns)
• Better EMI Characteristic ( small reverse recovery current and soft recovery characteristics)

Solutions

500V Ultra FRFETs

600V Ultra FRFETs

UniFET2 Ultra FRFETs