Fairchild's silicon carbide (SiC) power devices provide dramatic improvements in efficiency and power at both the component and system level as compared to other silicon counterparts, helping designers meet cost and improve power density, reliability and efficiency in their designs.
Our SiC Bipolar Junction Transistors (BJTs) deliver higher switching frequencies and lower losses—thereby providing higher output power in the same system form factor, and reducing the costs of passive components enabling the use of smaller inductors, capacitors and heat sinks.
Key Benefits of SiC BJTs:
- High Power Density
- Through higher switching frequency at same or better losses, enabling the use of smaller inductors, heatsink and capacitors.
- Increase output power while maintaining system form factor.
- Lower System Cost
- Through lower losses and higher power density, smaller cooling and increased power output for the same hardware.
- Offer productivity improvement.
- Ease of Use
- Predictable behavior with positive temp coefficient Straightforward base driver implementation without hidden complexity.
- Improve time to market, enable easy system migration.
