Fairchild Semiconductor

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Innovative technologies enable 600V and 1200V IGBTs that are optimized for high voltage and high current applications.

Fairchild IGBTs feature reduced VCE (sat) and minimal Turn Off Switching Loss (Eoff) and are optimized for the design of high efficiency systems in solar inverter, UPS, welder, induction heating and power generator applications. This portfolio includes 600V and 1200V IGBTs and are available in different key technologies: PT (Punch-Through), NPT (Non Punch-Through), FS (Field Stop; Planar, Trench, Shorted Anode).

Application Notes

Application Note	Product/Topic	Description
AN-9006	1N4937, 2N4401, 2N4403	IGBT Application Note for Camera Strobe
AN-9017	1N4937, KA431, KA431A, KA431L, KA431S, LM319, SGH30N60RUFD, SGP10N60RUFD	Manufacturing Technology of a Small Capacity Inverter Using a Fairchild IGBT
AN-7511	1N914, 1N914A, 1N914B, 1N914BWS, 1N914BWT, H11F3M, H11L1M	Insulated-Gate Transistors Simplify AC-Motor Speed Control
AN-7010	FCP11N60	Choosing Power Switching Devices for SMPS Designs
AN-7520	HGTG30N60B3, HGTG40N60B3	Numerical Method for Evaluating IGBT Losses
AN-9012	KA358, KA358A, KA393, KA393A, SGH40N60UF, SGH40N60UFD	Induction Heating System Topology Review
AN-9020	SGL50N60RUFD	IGBT Basic II
AN-7505		Improved IGBTs with Fast Switching Speed And High-Current Capability
AN-9007		High Performance 1200V PT IGBT with Improved Short-Circuit Immunity
AN-9742		Devices selection guide for Half-Bridge Welding Machine [IGBT & Diode]
AN-7512		Parallel Operation Of Insulated Gate Transistors
AN-9016		IGBT Basics 1
AN-7513		Parallel Operation Of Semiconductor Switches
AN-7504		The IGBTs - A New High Conductance MOS-Gated Device

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