Fairchild utilizes both traditional reliability test methods and Wafer Level Reliability (WLR) test techniques to assess product reliability during qualification testing. A properly designed qualification sequence exposes, within a matter of days or weeks, those design, materials, or workmanship weaknesses which could lead to device failure in the customer's application after months or even years in operation. All of our test methods are based on customer requirements and current industry standards and are fully documented. A summary table detailing traditional reliability test procedures (for plastic packages) utilized by Fairchild Semiconductor appears below:
| Test | Industry Standard |
|---|---|
| Preconditioning | JESD22-A113 |
| Power Cycle | JESD22-A122 |
| Operating Life | JESD22-A108 |
| High Temperature Reverse Bias Test | JESD22-A108 |
| High Temperature Gate Bias Test | JESD22-A108 |
| Temperature Humidity Biased Test | JESD22-A101 |
| Highly Accelerated Stress Test | JESD22-A110 |
| Autoclave | JESD22-A102 |
| Temperature Cycle | JESD22-A104 |
| High Temperature Storage Life | JESD22-A103 |
| Early Fail Rate | JESD22-A108 |
| Reflow Solder Mositure Sensitivity | J-STD-020 |
| Wave Solder Moisture Sensitivity | JESD22-A111 |
| Resistance to Solder Heat | JESD22-B106 |
| Lead Integrity | JESD22-B105 |
| Mark Permanency | JESD22-B107 |
| Flammability | UL940 |
| Solderability | JESD22-B102 |
| Thermal Impedance | JESD24-3, JESD24-4, JESD531, JESD313, JESD51, JESD51-1, JESD51-2, JESD51-6, JESD282 |
| Gate Leakage | AEC-Q100-006 |
| Bond Pull | MIL-STD-883-2011 |
| Bond Shear | AEC-Q100-001 |
| Die Shear | MIL-STD-883-2019 |
| Physical Dimensions | JESD22-B100 |
| Electromigration | JESD 61 |
| Hot Electron | JESD 28 |
| Time Dependent Dielectric Breakdown | JESD 35 |
| Electrostatic Discharge (ESD) Testing Human Body Model (HBM) Charged Device Model (CDM) Machine Model (MM) | JESD22-A114 JESD22-C101 JESD22-A115 |
| Latch-Up | JESD 78 |
| Tin Whisker Susceptibility | JESD22-A121 |
In addition to these traditional reliability stresses, Fairchild has an active Wafer Level Reliability (WLR) program that serves to assess process reliability by providing quantifiable data on failure rate by mechanism (i.e.; mobile ionics) using very quick (typically less than one minute), highly accelerated stress techniques. These non-traditional stress techniques are meant to provide supplementary data to the traditional stress techniques for the purposes of characterizing and improving process reliability during the development stage. Fairchild has developed WLR tests for the following failure mechanisms:
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