Reliability Approach

Fairchild utilizes both traditional reliability test methods and Wafer Level Reliability (WLR) test techniques to assess product reliability  during qualification testing. A properly designed qualification sequence exposes, within a matter of days or weeks, those design, materials, or workmanship weaknesses  which could lead to device failure in the customer's application after months or even years in operation. All of our test methods are based on customer requirements and current industry standards and are fully documented. A summary table detailing traditional reliability test procedures (for plastic packages) utilized by Fairchild Semiconductor appears below:

TestIndustry Standard
PreconditioningJESD22-A113
Power CycleJESD22-A122
Operating LifeJESD22-A108
High Temperature Reverse Bias TestJESD22-A108
High Temperature Gate Bias TestJESD22-A108
Temperature Humidity Biased TestJESD22-A101
Highly Accelerated Stress TestJESD22-A110
AutoclaveJESD22-A102
Temperature CycleJESD22-A104
High Temperature Storage LifeJESD22-A103
Early Fail RateJESD22-A108
Reflow Solder Mositure SensitivityJ-STD-020
Wave Solder Moisture SensitivityJESD22-A111
Resistance to Solder HeatJESD22-B106
Lead IntegrityJESD22-B105
Mark PermanencyJESD22-B107
FlammabilityUL940
SolderabilityJESD22-B102
Thermal ImpedanceJESD24-3, JESD24-4, JESD531,
JESD313, JESD51, JESD51-1,
JESD51-2, JESD51-6, JESD282
Gate LeakageAEC-Q100-006
Bond PullMIL-STD-883-2011
Bond ShearAEC-Q100-001
Die ShearMIL-STD-883-2019
Physical DimensionsJESD22-B100
ElectromigrationJESD 61
Hot ElectronJESD 28
Time Dependent Dielectric BreakdownJESD 35
Electrostatic Discharge (ESD) Testing
Human Body Model (HBM)
Charged Device Model (CDM)
Machine Model (MM)

JESD22-A114
JESD22-C101
JESD22-A115
Latch-UpJESD 78
Tin Whisker SusceptibilityJESD22-A121

In addition to these traditional reliability stresses, Fairchild has an active Wafer Level Reliability (WLR) program that serves to assess process reliability by providing quantifiable data on failure rate by mechanism (i.e.; mobile ionics) using very quick (typically less than one minute), highly accelerated stress techniques. These non-traditional stress techniques are meant to provide supplementary data to the traditional stress techniques for the purposes of characterizing and improving process reliability during the development stage. Fairchild has developed WLR tests for the following failure mechanisms:

  • Intermetal Dielectric Integrity
  • Metal Step Coverage
  • Mobile Ionics
  • Metal Stress Voids
  • Gate Oxide Integrity
  • Passivation Integrity
  • Hot Electron Degradation
  • Metal Electromigration
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