FDS3572

80 V MOSFET Delivers Improved System Efficiency in DC/DC Converter Power Supply Designs

The FDS3572, an 80 V N-channel MOSFET in a low profile SO-8 packaging, provides excellent overall system efficiencies in both primary-side DC/DC converter and secondary-side synchronous rectifier switching power supply designs. The FDS3572 features a 7.5 nC Miller charge (Q_GD) that is 38% lower than products with similar R_DS(on) ratings. This low Miller charge combined with the device's low R_DS(on) (16 milliohms) adds up to a Figure of Merit (FOM= R_DS(on) x Q_GD) of 120--33% lower than the closest competitor. This device also features best-in-class total gate charge (31 nC, at V_GS = 10 V) for low power loss, a low Q_RR (70 nC) for lower reverse recovery losses and high avalanche energy capability (EAS = 515 mJ) for robust performance.

Features and Benefits

- Low Q_GD - reduces switching transition times and hence switching losses in the MOSFET. Low Q_GD also implies lower C_RSS and more immunity to reapplied gate bias during fast drain voltage swings during turn off.
- Low Q_G(TOT) - reduces switching losses in both the MOSFET and the driver / PWM controller IC, allowing higher frequencies and higher current density designs.
- Low R_G, (ESR) - allows a low impedance driver to exploit the very low gate charge of the MOSFET and realize the fastest switching speeds.

Applications

- Primary side switch for isolated DC-DC converter designs supporting telecom and networking applications
- Secondary side synchronous rectifier SMPS
- Distributed power and intermediate bus architectures
- High voltage synchronous rectifier for DC bus converters