SuperFET™ Technology
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| The structure of SuperFET is similar to that of our standard MOSFET, except that the P-pillar is added under the active P-well. Thanks to this P-pillar, the resistivity of N epi can be reduced compared to that of planar conventional MOSFET maintaining the same breakdown voltage. Therefore, resistance of SuperFET is only one third in comparison with that of our latest planar MOSFET at the same area. |
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Because of the reduced resistance, the FOM(Figure of Merit) itself of SupertFET is also just one third of out latest version planar MOSFET. |
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