UniFET™ MOSFETs

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2 kV HBM surge stress. This product family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Features

  • "Soft" body diode recovery and 100% avalanche tested
  • Different recovery characteristic diode options
  • Smaller stored energy in dynamic characteristics (i.e. capacitance)
  • A lower gate charge (Qg) performance
  • Lowest on-resistance Rds(on) in planar MOSFETs
  • Improved gate-source ESD structure

Benefits

  • Improved system reliability in PFC and soft switching topologies
  • Optimized for different applications (FRFET® series and Ultra FRFET™ series)
  • Switching loss improvements
  • Lower conduction loss

Planar vs. Super-Junction Technology MOSFETs

Planar MOSFET

  • Ease of use in applications
  • Naturally, low electromagnetic interference (EMI) noise
  • Robust Repetitive Avalanche Energy, EAR
  • Reliable operation at abnormal conditions

Super-Junction MOSFET

  • Faster switching speed to maximize system efficiency
  • Increased power density
  • Fast & Optimized switching performance
  • Reliable operation at abnormal conditions

Applications

  • LCD/LED/PDP TV
  • Lighting
  • Uninterruptible Power Supply
  • Inverter
  • AC/DC Power Supply

UniFET II MOSFET – Body Diode Reverse Recovery Time (trr)

UniFET II MOSFET – Low Stored energy In Output Capacitance

UniFET II MOSFET – Low Stored energy In Output Capacitance

UniFET II MOSFET – Efficiency

UniFET II MOSFET – Efficiency