UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2 kV HBM surge stress. This product family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.


  • "Soft" body diode recovery and 100% avalanche tested
  • Different recovery characteristic diode options
  • Smaller stored energy in dynamic characteristics (i.e. capacitance)
  • A lower gate charge (Qg) performance
  • Lowest on-resistance Rds(on) in planar MOSFETs
  • Improved gate-source ESD structure


  • Improved system reliability in PFC and soft switching topologies
  • Optimized for different applications (FRFET® series and Ultra FRFET™ series)
  • Switching loss improvements
  • Lower conduction loss

Planar vs. Super-Junction Technology MOSFETs


  • Ease of use in applications
  • Naturally, low electromagnetic interference (EMI) noise
  • Robust Repetitive Avalanche Energy, EAR
  • Reliable operation at abnormal conditions

Super-Junction MOSFET

  • Faster switching speed to maximize system efficiency
  • Increased power density
  • Fast & Optimized switching performance
  • Reliable operation at abnormal conditions


  • Lighting
  • Uninterruptible Power Supply
  • Inverter
  • AC/DC Power Supply

UniFET II MOSFET – Body Diode Reverse Recovery Time (trr)

UniFET II MOSFET – Low Stored energy In Output Capacitance

UniFET II MOSFET – Low Stored energy In Output Capacitance

UniFET II MOSFET – Efficiency

UniFET II MOSFET – Efficiency