FDMC7570S

25V N-Channel Power Trench® SyncFET™

The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

Features

  • Max rDS(on) = 2 mΩ at VGS = 10 V, ID = 27 A
  • Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 21.5 A
  • Advanced Package and Combination for low rDS(on) and high efficiency
  • SyncFET Schottky Body Diode
  • 100% UIL Tested
  • RoHS Compliant
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Product Product &
Eco Status
Unit Price/
1K Order
Packing Method Convention Package Marking
Convention*
Qualification
Support
Compliance
Certificates
FDMC7570S Full Production
Green as of Nov 2009
 China RoHS
$0.56

PQFN 3.3x3.3 8L (Power 33)  -  Details
1.1 x 3.3 x 3.3mm,  TAPE REEL

PDF PQFN 3.3x3.3 8L (Power 33)  Drawing
Last Update: Jan 2015
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K

Line 2FDMC

Line 37570S

FIT [Calculate] 0.67 @55°C
MTBF 1.5E9

ESD (CDM) 2000V

ESD (HBM) 1600V

RƟJA 53°C/W

RƟJC 2.1°C/W

Moisture Sensitivity Level (MSL) 1

Max Reflow Temp 260

PDF RoHS IPC1752
XML RoHS IPC1752
PDF RoHS/REACH/JIG
PDF China RoHS

If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
* Click here for further top mark packaging information for FDMC7570S

This product is general usage and suitable for many different applications.
Application Note Description
AN-7533 PDFA Revised MOSFET Model With Dynamic Temperature Compensation
Last Update : 05-Mar-2011
AN-7515 PDFA Combined Single-Pulse and Repetitive UIS Rating System
Last Update : 03-Mar-2011
AN-4163 PDFShielded Gate PowerTrench® MOSFET Datasheet Explanation
Last Update : 23-Oct-2014
AN-558 PDFIntroduction to Power MOSFETs and their Applications
Last Update : 29-Mar-2016
AN-9065 PDFFRFET® in Synchronous Rectification
Last Update : 17-Mar-2017
AN-9010 PDFMOSFET Basics
Last Update : 09-Sep-2013
AN-9034 PDFPower MOSFET Avalanche Guideline
Last Update : 05-Mar-2011
AN-7510 PDFA New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options
Last Update : 05-Mar-2011
AN-9005 PDFDriving and Layout Design for Fast Switching Super-Junction MOSFETs
Last Update : 26-Nov-2014
Package Condition Temperature Range Vcc Range Software Version Revision Date
PSPICE
PQFN 3.3x3.3 8L (Power 33) Electrical -55°C to 150°C N/A OrCAD 16.3 18-May-2016

For additional information please visit the Models page.

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Product
Ea
(0.3 - 1.4)
Confidence
(0.6-0.9)
T use (°C)
T Stress (°C)
Kt (eV/K)
Device Hours
@ T Stress
(devices*hours)
Rejects
(devices)
Chi
Square
Acceleration
Factor
FIT @ T use
MTBF @ T
use (hours)
FDMC7570S 0.7 0.6 55 150 8.62E-05 5304081.03 0 1.83 259.24 0.67
Run new FIT calculation
1.5E9