MMBF170

N - Channel Enhancement Mode Field Effect Transistor

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.
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Index Product Product &
Eco Status
Unit Price/
1K Order
Packing Method Convention Package Marking
Convention*
Qualification
Support
Compliance
Certificates
0 MMBF170 Full Production
Green as of Jan 2013
$0.0399

SOT-23 3L -  Details
1.2 x 2.92 x 1.3mm,  TAPE REEL

PDF SOT-23 3L  Drawing
Last Update: Jan 2015 PDF SOT23-3L Packing Drawing
Last Update: Jan 2015 PDF SOT23-3L, PACKING DRAWING
Last Update: May 2014 PDF SOT23-3L T&R PACKING DRAWING
Last Update: May 2013
Line 1&Y (Binary Calendar Year Coding)

Line 26Z&E (Space)
&G (Weekly Date Code)

FIT 3.5

RƟJA 417°C/W

Moisture Sensitivity Level (MSL) 1

Max Reflow Temp 260

PDF RoHS IPC1752
XML RoHS IPC1752
PDF RoHS/REACH/JIG
0 9G85_MMBF170 Full Production (Special Order)
Green
Contact Fairchild

Die/Wafer -  Details
RAIL

Line 1N/A

RƟJA 417°C/W

PDF RoHS IPC1752
XML RoHS IPC1752
PDF RoHS/REACH/JIG

If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
* Click here for further top mark packaging information for MMBF170

This product is general usage and suitable for many different applications.
Application Note Description
AN-4163 PDFShielded Gate PowerTrench® MOSFET Datasheet Explanation
Last Update : 23-Oct-2014
AN-9005 PDFDriving and Layout Design for Fast Switching Super-Junction MOSFETs
Last Update : 26-Nov-2014
AN-9010 PDFMOSFET Basics
Last Update : 09-Sep-2013
AN-7515 PDFA Combined Single-Pulse and Repetitive UIS Rating System
Last Update : 03-Mar-2011
AN-558 PDFIntroduction to Power MOSFETs and their Applications
Last Update : 28-Jun-2014
AN-7533 PDFA Revised MOSFET Model With Dynamic Temperature Compensation
Last Update : 05-Mar-2011
AN-7510 PDFA New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options
Last Update : 05-Mar-2011
AN-9065 PDFFRFET® in Synchronous Rectification
Last Update : 28-Jun-2014
AN-9034 PDFPower MOSFET Avalanche Guideline
Last Update : 05-Mar-2011
Package Condition Temperature Range Vcc Range Software Version Revision Date
PSPICE
Electrical 25°C to 125°C N/A Orcad 9.1 28-Feb-2012

For additional information please visit the Models page.

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