NDT3055

N-Channel Enhancement Mode Field Effect Transistor

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features

  • 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V.
  • High density cell design for extremely lowRDS(ON).
  • High power and current handling capability in a widely used surface mount package.
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Index Product Product &
Eco Status
Unit Price/
1K Order
Packing Method Convention Package Marking
Convention*
Qualification
Support
Compliance
Certificates
0 NDT3055 Full Production
ROHS Compliant as of 27-Feb-2006
$0.65

SOT-223 4L -  Details
1.8 x 6.7 x 3.7mm,  TAPE REEL

PDF SOT-223 4L  Drawing
Last Update: Feb 2012 PDF SOT223-4L, PACKING DRAWING
Last Update: May 2013
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K

Line 23055

FIT 3.5

ESD (CDM) 2000V

ESD (HBM) 600V

RƟJA 42°C/W

RƟJC 12°C/W

Moisture Sensitivity Level (MSL) 1

Max Reflow Temp 260

PDF RoHS IPC1752
XML RoHS IPC1752
PDF RoHS/REACH/JIG

If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
* Click here for further top mark packaging information for NDT3055

This product is general usage and suitable for many different applications.
Application Note Description
AN-9005 PDFDriving and Layout Design for Fast Switching Super-Junction MOSFETs
Last Update : 26-Nov-2014
AN-9010 PDFMOSFET Basics
Last Update : 09-Sep-2013
AN-7533 PDFA Revised MOSFET Model With Dynamic Temperature Compensation
Last Update : 05-Mar-2011
AN-9065 PDFFRFET® in Synchronous Rectification
Last Update : 28-Jun-2014
AN-4163 PDFShielded Gate PowerTrench® MOSFET Datasheet Explanation
Last Update : 23-Oct-2014
AN-7515 PDFA Combined Single-Pulse and Repetitive UIS Rating System
Last Update : 03-Mar-2011
AN-558 PDFIntroduction to Power MOSFETs and their Applications
Last Update : 28-Jun-2014
AN-9034 PDFPower MOSFET Avalanche Guideline
Last Update : 05-Mar-2011
AN-7510 PDFA New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options
Last Update : 05-Mar-2011
AN-1028 PDFMaximum Power Enhancement Techniques for SOT-223 Power MOSFETs
Last Update : 05-Mar-2011
Package Condition Temperature Range Vcc Range Software Version Revision Date
PSPICE
SOT-223 4L Electrical 25°C to 125°C N/A Orcad 9.1 28-Feb-2012

For additional information please visit the Models page.

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