RFD14N05L

N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.

Features

  • 14A, 50V
  • rDS(ON)= 0.100Ω
  • Temperature Compensating PSPICE® Model
  • Can be Driven Directly from CMOS, NMOS, andTTL Circuits
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • 175°C Operating Temperature
  • Related Literature
  • TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”
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Product Product &
Eco Status
Unit Price/
1K Order
Packing Method Convention Package Marking
Convention*
Qualification
Support
Compliance
Certificates
RFD14N05L Full Production
ROHS Compliant as of 27-Feb-2006
 China RoHS
$0.5461

TO-251 3L (IPAK)  -  Details
2.5 x 6.8 x 17.22mm,  RAIL

PDF TO-251 3L (IPAK)  Drawing
Last Update: May 2016 PDF TO251-3L (IPAK), OPTION AA, PACKING DRAWING
Last Update: May 2013
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K

Line 214N05L

FIT [Calculate] 0.38 @55°C
MTBF 2.66E9

RƟJA 100°C/W

RƟJC 3.125°C/W

PDF RoHS IPC1752
XML RoHS IPC1752
PDF RoHS/REACH/JIG
PDF China RoHS

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  • AC-DC Merchant Power Supply - Servers & Workstations
  • Server & Mainframe
  • Workstation
Application Note Description
AN-9065 PDFFRFET® in Synchronous Rectification
Last Update : 17-Mar-2017
AN-9034 PDFPower MOSFET Avalanche Guideline
Last Update : 05-Mar-2011
AN-558 PDFIntroduction to Power MOSFETs and their Applications
Last Update : 29-Mar-2016
AN-9010 PDFMOSFET Basics
Last Update : 09-Sep-2013
AN-7515 PDFA Combined Single-Pulse and Repetitive UIS Rating System
Last Update : 03-Mar-2011
AN-4163 PDFShielded Gate PowerTrench® MOSFET Datasheet Explanation
Last Update : 23-Oct-2014
AN-7533 PDFA Revised MOSFET Model With Dynamic Temperature Compensation
Last Update : 05-Mar-2011
AN-7510 PDFA New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options
Last Update : 05-Mar-2011
AN-9005 PDFDriving and Layout Design for Fast Switching Super-Junction MOSFETs
Last Update : 26-Nov-2014
Package Condition Temperature Range Vcc Range Software Version Revision Date
PSPICE
TO-251 3L (IPAK) Electrical -55°C to 175°C N/A Orcad 9.1 28-Feb-2012

For additional information please visit the Models page.

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Product
Ea
(0.3 - 1.4)
Confidence
(0.6-0.9)
T use (°C)
T Stress (°C)
Kt (eV/K)
Device Hours
@ T Stress
(devices*hours)
Rejects
(devices)
Chi
Square
Acceleration
Factor
FIT @ T use
MTBF @ T
use (hours)
RFD14N05L 0.7 0.6 55 150 8.62E-05 9386300.85 0 1.83 259.24 0.38
Run new FIT calculation
2.66E9